XC888LM datasheet(59/144 Pages) INFINEON

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XC886/888CLM

Functional Description

Data Sheet

V0.9, 2006-12

3.3

Flash Memory

The Flash memory provides an embedded user-programmable non-volatile memory,

allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V

supply from the Embedded Voltage Regulator (EVR) and does not require additional

programming or erasing voltage. The sectorization of the Flash memory allows each

sector to be erased independently.

Features

•

In-System Programming (ISP) via UART

•

In-Application Programming (IAP)

•

Error Correction Code (ECC) for dynamic correction of single-bit errors

•

Background program and erase operations for CPU load minimization

•

Support for aborting erase operation

•

Minimum program width

1) of 32-byte for D-Flash and 64-byte for P-Flash

•

1-sector minimum erase width

•

1-byte read access

•

Operating supply voltage: 2.5 V ± 7.5 %

•

Read access time: 3 ×

CCLK = 125 ns

•

Program time: 248256 /

SYS = 2.6 ms

•

Erase time: 9807360 /

SYS = 102 ms

1) P-Flash: 64-byte wordline can only be programmed once, i.e., one gate disturb allowed.

D-Flash: 32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.

2) Values shown here are typical values.

sys =96MHz ±7.5% (fCCLK = 24 MHz ± 7.5 %) is the maximum

frequency range for Flash read access.

3) Values shown here are typical values.

sys = 96 MHz ± 7.5%

is the only frequency range for Flash

programming and erasing.

sysmin is used for obtaining the worst case timing.

XC888LM Datasheet(PDF) 59 Page - Infineon Technologies AG

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