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CY8C3865LTI-059 Datasheet(PDF) 106 Page - Cypress Semiconductor |
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CY8C3865LTI-059 Datasheet(HTML) 106 Page - Cypress Semiconductor |
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106 / 129 page ![]() PSoC® 3: CY8C38 Family Data Sheet Document Number: 001-11729 Rev. *R Page 106 of 129 Figure 11-68. Asynchronous Write Cycle Timing Table 11-66. Asynchronous Read Cycle Specifications Parameter Description Conditions Min Typ Max Units T EMIF clock period[46] Vdda ≥ 3.3 V 30.3 – – nS Tcel EM_CEn low time 2T – 5 – 2T+ 5 nS Taddrv EM_CEn low to EM_Addr valid – – 5 nS Taddrh Address hold time after EM_Wen high T – – nS Toel EM_OEn low time 2T – 5 – 2T + 5 nS Tdoesu Data to EM_OEn high setup time T + 15 – – nS Tdoeh Data hold time after EM_OEn high 3 – – nS Address Taddrh Tcel Taddrv EM_ Addr EM_CEn EM_ WEn EM_OEn EM_ Data Twel Tdcev Tdweh Data Note 46. Limited by GPIO output frequency, see Table 11-10 on page 74. Table 11-67. Asynchronous Write Cycle Specifications Parameter Description Conditions Min Typ Max Units T EMIF clock period[46] Vdda ≥ 3.3 V 30.3 – – nS Tcel EM_CEn low time T – 5 – T + 5 nS Taddrv EM_CEn low to EM_Addr valid – – 5 nS Taddrh Address hold time after EM_WEn high T – – nS Twel EM_WEn low time T – 5 – T + 5 nS Tdcev EM_CEn low to data valid – – 7 nS Tdweh Data hold time after EM_WEn high T – – nS [+] Feedback |
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