| Electronic Components Datasheet Search |
|
CY8C3865LTI-059 Datasheet(PDF) 71 Page - Cypress Semiconductor |
|
|
|||||||||||||||||||||||||||||
CY8C3865LTI-059 Datasheet(HTML) 71 Page - Cypress Semiconductor |
|
71 / 129 page ![]() PSoC® 3: CY8C38 Family Data Sheet Document Number: 001-11729 Rev. *R Page 71 of 129 Figure 11-8. Efficiency vs VOUT IOUT = 30 mA, VBAT ranges from 0.7 V to VOUT, LBOOST = 22 µH Figure 11-9. Efficiency vs VBAT IOUT = 30 mA, VOUT = 3.3 V, LBOOST = 22 µH Table 11-7. Inductive Boost Regulator AC Specifications Unless otherwise specified, operating conditions are: VBAT = 2.4 V, VOUT = 2.7 V, IOUT = 40 mA, FSW = 400 kHz, LBOOST = 10 µH, CBOOST = 22 µF || 0.1 µF. Parameter Description Conditions Min Typ Max Units VRIPPLE Ripple voltage (peak-to-peak) VOUT = 1.8 V, FSW = 400 kHz, IOUT = 10 mA – – 100 mV FSW Switching frequency – 0.1,0.4, or 2 –MHz Table 11-8. Recommended External Components for Boost Circuit Parameter Description Conditions Min Typ Max Units LBOOST Boost inductor 4.7 10 47 µH CBOOST Filter capacitor[29] 10 22 47 µF IF External Schottky diode average forward current External Schottky diode is required for VOUT > 3.6 V 1– – A VR 20 – – V Note 29. Based on device characterization (Not production tested). [+] Feedback |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |