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CY8C3865LTI-059 Datasheet(PDF) 104 Page - Cypress Semiconductor

Part # CY8C3865LTI-059
Description  Programmable System-on-Chip (PSoC짰)
PDF  129 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY8C3865LTI-059 Datasheet(HTML) 104 Page - Cypress Semiconductor

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PSoC® 3: CY8C38 Family
Data Sheet
Document Number: 001-11729 Rev. *R
Page 104 of 129
11.4.2 EEPROM
11.4.3 Nonvolatile Latches (NVL))
11.4.4 SRAM
Table 11-60. EEPROM DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Erase and program voltage
1.71
–
5.5
V
Table 11-61. EEPROM AC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
TWRITE
Single row erase/write cycle time
–
2
20
ms
EEPROM data retention time,
retention period measured from last
erase cycle
Average ambient temp, TA ≤ 25 °C,
1M erase/program cycles
20
–
–
years
Average ambient temp, TA ≤ 55 °C,
100 K erase/program cycles
20
–
–
Average ambient temp. TA ≤ 85 °C,
10 K erase/program cycles
10
–
–
Table 11-62. NVL DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Erase and program voltage
VDDD pin
1.71
–
5.5
V
Table 11-63. NVL AC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
NVL endurance
Programmed at 25 °C
1K
–
–
program/erase cycles
Programmed at 0 °C to 70 °C
100
–
–
program/erase cycles
NVL data retention time
Programmed at 25 °C
20
–
–
years
Programmed at 0 °C to 70 °C
20
–
–
years
Table 11-64. SRAM DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
VSRAM
SRAM retention voltage
1.2
–
–
V
Table 11-65. SRAM AC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
FSRAM
SRAM operating frequency
DC
–
67.01
MHz
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