CY8C3865LTI-059 datasheet(103/129 Pages) CYPRESS

103 / 129 page

PSoC® 3: CY8C38 Family

Data Sheet

Document Number: 001-11729 Rev. *R

Page 103 of 129

Figure 11-66. Clock to Output Performance

11.4 Memory

Specifications are valid for –40 °C

≤ TA ≤ 85 °C and TJ ≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,

except where noted.

11.4.1 Flash

Table 11-58. Flash DC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

Erase and program voltage

VDDD pin

1.71

–

5.5

Table 11-59. Flash AC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

TWRITE

Row write time (erase + program)

–

TERASE

Row erase time

–

Row program time

–

TBULK

Bulk erase time (16 KB to 64 KB)

–

Sector erase time (8 KB to 16 KB)

–

Total device program time,

including JTAG or SWD, and other

overhead

–

seconds

Flash data retention time, retention

period measured from last erase

cycle

Average ambient temp.

TA ≤ 55 °C, 100 K erase/program

cycles

–

years

Average ambient temp.

TA ≤ 85 °C, 10 K erase/program

cycles

–

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