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HD6417618 Datasheet(PDF) 597 Page - Renesas Technology Corp |
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HD6417618 Datasheet(HTML) 597 Page - Renesas Technology Corp |
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597 / 646 page ![]() Section 21 Electrical Characteristics Rev. 6.00 Jun. 12, 2007 Page 565 of 610 REJ09B0131-0600 Tc2 Tc3 Tc4 Trwl Tr Tc1 t AD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t AD1 t RWD t RWD t RWD t CSD1 t AD1 t AD1 t AD1 t AD1 CKIO CSn RD/ WR A11* t RASD t RASD RAS Row address Write command t CASD t CASD CAS t BSD t BSD (High) BS CKE t DQMD t DQMD DQMxx t WDH2 t WDD2 t WDH2 t WDD2 A25 to A0 D15 to D0 Note: * An address pin connected to pin A10 of SDRAM Write A command Column address Column address Column address Column address Figure 21.22 Synchronous DRAM Burst Write Bus Cycle (Single Write × 4) (Auto-Precharge, WTRCD = 0 Cycle, TRWL = 1 Cycle) |
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