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HD6417618 Datasheet(PDF) 593 Page - Renesas Technology Corp |
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HD6417618 Datasheet(HTML) 593 Page - Renesas Technology Corp |
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593 / 646 page  Section 21 Electrical Characteristics Rev. 6.00 Jun. 12, 2007 Page 561 of 610 REJ09B0131-0600 Tc1 Tc2 Td1 Td2 Td3 Td4 Tr Tc3 Tc4 Tde t AD1 t AD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t RWD t RWD t CSD1 t AD1 t AD1 t AD1 t AD1 t RDH2 t RDS2 CKIO CSn RD/ WR A11* t RASD t RASD RAS Read command t CASD t CASD CAS t BSD t BSD (High) BS CKE t DQMD t DQMD DQMxx t RDH2 t RDS2 A25 to A0 D15 to D0 Note: * An address pin connected to pin A10 of SDRAM Column address Column address Column address Column address Row address Read A command Figure 21.18 Synchronous DRAM Burst Read Bus Cycle (Single Read × 4) (Auto-Precharge, CAS Latency = 2, WTRCD = 0 Cycle, WTRP = 1 Cycle) |
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