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HD6417618 Datasheet(PDF) 603 Page - Renesas Technology Corp |
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HD6417618 Datasheet(HTML) 603 Page - Renesas Technology Corp |
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603 / 646 page  Section 21 Electrical Characteristics Rev. 6.00 Jun. 12, 2007 Page 571 of 610 REJ09B0131-0600 Tc2 Tc3 Tc4 Tnop Tc1 t AD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t RWD t RWD t RWD t CSD1 t AD1 t AD1 t AD1 CKIO CSn RD/ WR A11* RAS Write command Column address Column address Column address Column address t CASD t CASD CAS t BSD t BSD (High) BS CKE t DQMD t DQMD DQMxx t WDH2 t WDD2 t WDH2 t WDD2 A25 to A0 D15 to D0 Note: * An address pin connected to pin A10 of SDRAM Figure 21.28 Synchronous DRAM Burst Write Bus Cycle (Single Write × 4) (Bank Active Mode: WRITE Command, Same Row Address, WTRCD = 0 Cycle, TRWL = 0 Cycle) |
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