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STM32H562II Datasheet(PDF) 215 Page - STMicroelectronics

Part # STM32H562II
Description  Arm® Cortex®-M33 32-bit MCU TrustZone® FPU, 375 DMIPS, 250 MHz, 2-Mbyte flash, 640-Kbyte RAM, math accelerators
PDF  270 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H562II Datasheet(HTML) 215 Page - STMicroelectronics

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DS14258 Rev 5
215/270
STM32H562xx and STM32H563xx
Electrical characteristics
238
5.3.26
Digital temperature sensor characteristics
5.3.27
VCORE monitoring characteristics
5.3.28
Temperature and VBAT monitoring
Table 102. Digital temperature sensor characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fDTS(2)
Output clock frequency
-
500
750
1150
kHz
TLC(2)
Temperature linearity coefficient
VOS2
1660 2100 2750 Hz/°C
TTOTAL_ERROR(2)
Temperature offset
measurement, all VOS
TJ = −40 to 30 °C
-13
-
4
°C
TJ = 30 °C to TJmax
-7
-
2
TVDD_CORE
Additional error due to supply
variation
VOS2
0
-
0
°C
VOS0, VOS1,
VOS3
-1
-
1
tTRIM
Calibration time
-
-
-
2
ms
tWAKE_UP
Wake-up time from off state
until DTS ready bit is set
--
67
116
μs
IDDCORE_DTS
DTS consumption on VDD_CORE
-
8.5
30
70
μA
1. Specified by design - Not tested in production, unless otherwise specified.
2. Evaluated by characterization - Not tested in production.
Table 103. VCORE monitoring characteristics(1)
1. Specified by design - Not tested in production.
Symbol
Parameter
Min
Typ
Max
Unit
TS_VCORE
ADC sampling time when reading the VCORE voltage
1
-
-
μs
Table 104. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-4 x 26
-
kΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
1. Specified by design - Not tested in production.
Error on Q
-10
-
+10
%
tS_vbat(1)
ADC sampling time when reading VBAT input
9
-
-
µs
VBAThigh
High supply monitoring
3.50
3.575
3.63
V
VBATlow
Low supply monitoring
-
1.36
-
IVBATbuf
Sensor buffer consumption
-
3.8
6.5
µA



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