STM32H562II datasheet(217/270 Pages) STMICROELECTRONICS

217 / 270 page

DS14258 Rev 5

217/270

STM32H562xx and STM32H563xx

Electrical characteristics

238

Load capacitor

0.5

1.50

μF

esr

Equivalent serial

resistor of CL

Ω

Iload

Static load current

Iline_reg

Line regulation

2.8 V ≤ VDDA ≤ 3.6 V

Iload = 500 µA

200

ppm/

Iload = 4 mA

100

Iload_reg Load regulation

500 µA ≤ Iload ≤ 4 mA Normal mode

ppm/

Tcoeff

Temperature

coefficient

-40 °C < TJ < +130 °C

100

ppm/

°C

PSRR

Power supply

rejection

100 kHz

tSTART

Start-up time

CL= 0.5 µF

300

µs

CL= 1 µF

500

CL= 1.5 µF

650

IINRUSH

Control of

maximum DC

current drive on

VREFBUF_OUT

during startup(4)

IDDA(VREF

BUF)

Consumption

from VDDA

ILOAD = 0 µA

µA

ILOAD = 500 µA

ILOAD = 4 mA

1. Specified by design - Not tested in production, unless otherwise specified.

2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA−drop voltage).

3. Evaluated by characterization - Not tested in production.

4. To properly control VREFBUF IINRUSH current during the startup phase and the change of scaling, VDDA voltage must be in

the range of 2.1 V - 3.6 V, 2.4 V -3.6 V, and 2.8 V - 3.6 V, respectively, for VRS = 010, 001, and 000.

Table 108. VREFBUF characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

STM32H562II Datasheet(PDF) 217 Page - STMicroelectronics

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