STM32H562II datasheet(157/270 Pages) STMICROELECTRONICS

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DS14258 Rev 5

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STM32H562xx and STM32H563xx

Electrical characteristics

238

5.3.12

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed (toggling two LEDs through I/O ports), the device is

stressed by two electromagnetic events until a failure occurs. The failure is indicated by the

LEDs:

•

Electrostatic discharge (ESD), positive and negative, is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows to resume normal operation.

The test results are given in Table 53. They are based on the EMS levels and classes

defined in AN1709 “EMC design guide for STM8, STM32 and legacy MCUs”.

As a consequence, it is recommended to add a serial resistor (1 kΩ), located as close as

possible to the MCU, to the pins exposed to noise (connected to tracks longer than 50 mm

on PCB).

1. Data are valid for program memory and high-cycling data memory.

2. Specified by design - Not tested in production.

Table 52. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NPEND Endurance program memory

TJ = -40 to +130 °C

kcycles

NDEND Endurance data memory

TJ = -40 to +130 °C

100

tPRET

Program memory, data retention

1 kcycle at TA = 125 °C

Years

1 kcycles at TA = 85 °C

10 kcycles at TA = 55 °C

tDRET

Data retention for data memory

100 kcycle at TA = 125 °C

100 kcycles at TA = 85 °C

100 kcycles at TA = 55 °C

1. Evaluated by characterization - Not tested in production, unless otherwise specified.

Table 53. EMS characteristics

Symbol

Parameter

Conditions

Level/Class

VFESD

Voltage limits to apply on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, TA = 25 °C,

LQFP176-SMPS,

frcc_cpu_ck = 250 MHz,

conform to IEC 61000-4-2

VFTB

Fast transient voltage burst limits to apply

through 100 pF on VDD and VSS pins to

induce a functional disturbance

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