STM32H562II datasheet(161/270 Pages) STMICROELECTRONICS

161 / 270 page

DS14258 Rev 5

161/270

STM32H562xx and STM32H563xx

Electrical characteristics

238

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS technology or TTL parameters. The

coverage of these requirements for FT I/Os is shown in the following figure.

Ileak(4)

FT_xx input leakage

current(3)

0 < VIN ≤

Max(VDDXXX)(7)

±200

Max(VDDXXX) <

VIN ≤ Max(VDDXXX) +

1 V) (5)(7)

2500

Max(VDDXXX) < VIN ≤

5.5 V (5)(7)

750

TT_xx input leakage

current

0 < VIN ≤ Max(VDDXXX)

(7)

±200

BOOT0

0 < VIN ≤ VDDOX

RPU

Weak pull-up

equivalent resistor(6)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent resistor(6)

VIN = VDD(7)

CIO

I/O pin capacitance

1. VDDIOx represents VDD or VDDIO2.

2. Compliant with CMOS requirements.

3. Specified by design - Not tested in production.

4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following

formula: ITotal_Ieak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).

5. VIN must be lower than Max(VDDXXX) + 3.6 V.

6. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10%).

7. Max(VDDXXX) is the maximum value of all the I/O supplies.

Table 58. I/O static characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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