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STM32H562II Datasheet(PDF) 156 Page - STMicroelectronics |
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STM32H562II Datasheet(HTML) 156 Page - STMicroelectronics |
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156 / 270 page ![]() Electrical characteristics STM32H562xx and STM32H563xx 156/270 DS14258 Rev 5 5.3.11 Memory characteristics Flash memory The characteristics are given at TJ = -40 to 130 °C unless otherwise specified. The devices are shipped to customers with the flash memory erased. Jitter Cycle-to-cycle jitter fVCO_OUT = 150 MHz - - 60 - ±ps fVCO_OUT = 200 MHz - - 40 - fVCO_OUT = 400 MHz - - 18 - fVCO_OUT = 420 MHz - - 15 - Period jitter fVCO_OUT = 150 MHz fPLL_OUT = 50 MHz -75 - fVCO_OUT = 400 MHz - 25 - Long term jitter Normal mode fVCO_OUT = 400 MHz - ±0.2 - % IDD(PLL) PLL power consumption on VDD fVCO_OUT = 420 MHz VDD - 275 360 μA VCORE -450 - fVCO_OUT = 150 MHz VDD - 160 240 VCORE -165 - 1. Specified by design - Not tested in production, unless otherwise specified. 2. This value must be limited to the maximum frequency due to the product limitation. 3. Evaluated by characterization - Not tested in production. Table 49. PLL characteristics (medium VCO frequency range) (continued) Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit Table 50. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Specified by design - Not tested in production Unit IDD Supply current Word program(2) 2. Data are evaluated with a write of 50% of the programmed bits equal to 0. -2.5 3.6 mA Sector erase - 1.8 4 Mass erase - 2.0 4 Table 51. Flash memory programming(1) Symbol Parameter Conditions Min(2) Typ Max(1) Unit tprog Word program time 128 bits (user area) - 31 100 µs 16 bits (OTP area) - 31 100 tERASE Sector erase time (8 Kbytes) - 2 10 ms tME Mass erase time - 0.512 2.6 s tBE Bank erase time - 0.256 1.3 Vprog Programming voltage 1.71 - 3.6 V |
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