STM32H562II datasheet(152/270 Pages) STMICROELECTRONICS

152 / 270 page

Electrical characteristics

STM32H562xx and STM32H563xx

152/270

DS14258 Rev 5

5.3.9

Internal clock source characteristics

The parameters given in Table 44 to Table 47 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 20.

48 MHz high-speed internal RC oscillator (HSI48)

64 MHz high-speed internal RC oscillator (HSI)

Table 44. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD = 3.3 V, TJ= 30 °C 47.5(1)

48.5(1) MHz

TRIM(3)

User trimming step

0.175

0.250

USER TRIM

COVERAGE(2)

User trimming coverage

±32 steps

±4.70

±5.6

DuCy(HSI48)(3)

Duty cycle

ACCHSI48_REL(3)

Accuracy of the HSI48 oscillator over

temperature (reference is 30 °C)

TJ = -40 to 130 °C

-4.5

∆VDD(HSI48)

HSI48 oscillator frequency drift with

VDD (reference is 3.3 V)

VDD = 3.0 to 3.6 V

0.025

0.05

VDD = 1.71 to 3.6 V

0.05

0.1

tsu(HSI48)(3)

HSI48 oscillator start-up time

2.1

4.0

μs

IDD(HSI48)(3)

HSI48 oscillator power consumption

350

400

μA

NT jitter(3)

Next transition jitter accumulated

jitter on 28 cycles

±0.15

PT jitter(3)

Paired transition jitter accumulated

jitter on 56 cycles(4)

±0.25

1. Calibrated during manufacturing tests.

2. Evaluated by characterization - Not tested in production.

3. Specified by design - Not tested in production.

4. Jitter measurements are performed without clock sources activated in parallel.

Table 45. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.3 V, TJ = 30 °C

63.7(2) 64.0(2) 64.3(2) MHz

TRIM

User trimming step

Trimming is not a multiple of 32(3)

0.24

0.32

Trimming is 128, 256, and 384(3)

-5.2

-1.8

Trimming is 64, 192, 320, and 488(3)

-1.4

-0.8

Other trimmings are multiples of 32 (not

including multiples of 64 and 128)(3)

-0.6

-0.25

DuCy(HSI) Duty cycle

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