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STM32H562II Datasheet(PDF) 141 Page - STMicroelectronics |
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STM32H562II Datasheet(HTML) 141 Page - STMicroelectronics |
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141 / 270 page ![]() DS14258 Rev 5 141/270 STM32H562xx and STM32H563xx Electrical characteristics 238 v Table 35. Typical and maximum current consumption in Stop mode Symbol Parameter Conditions Typ LDO Typ SMPS Max(1) (2) Unit TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(stop) Supply current in Stop Flash memory in low power mode, SRAMs ON SVOS3 0.37 0.09 2.00 13.98 24.00 44.39 mA SVOS4 0.27 0.07 1.40 10.48 18.37 34.76 SVOS5 0.19 0.06 0.86 7.08 12.88 25.31 Flash memory in normal mode, SRAMs ON SVOS3 0.38 0.10 2.02 14.01 24.06 44.55 SVOS4 0.29 0.09 1.42 10.52 18.46 34.88 Flash memory in low power mode, SRAMs OFF except SRAM2 16 Kbytes ON SVOS3 0.34 0.09 1.93 13.28 22.75 41.99 SVOS4 0.25 0.07 1.35 9.87 17.33 32.65 SVOS5 0.17 0.05 0.81 6.46 11.68 22.86 Flash memory in low power mode, SRAMs OFF except SRAM2 ON SVOS3 0.35 0.10 1.95 13.45 23.02 42.52 SVOS4 0.26 0.08 1.36 10.01 17.52 33.10 SVOS5 0.17 0.08 0.82 6.59 11.92 23.37 1. Evaluated by characterization - Not tested in production. 2. The maximum values are given for LDO regulator ON. Refer to Section 5.3.3 for the SMPS maximum current consumption. Table 36. Typical and maximum current consumption in Standby mode Symbol Parameter Conditions Typ(1) Max(1) Unit Backup RAM RTC and LSE(2) 1.8 V 2.4 V 3 V 3.3 V TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(standby) Supply current in standby mode, IWDG OFF OFF OFF 2.58 2.78 3.01 3.19 5.9 11.7 21.2 53 μA ON OFF 3.79 4.05 4.38 4.63 8.2 21.0 37.0 90 OFF ON 2.91 3.15 3.47 3.67 6.9 12.9 22.5 55 ON ON 4.16 4.46 4.85 5.12 9.2 22.2 38.3 92 1. Evaluated by characterization - Not tested in production. 2. LSE is in medium-low drive mode. |
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