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STM32H562II Datasheet(PDF) 138 Page - STMicroelectronics |
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STM32H562II Datasheet(HTML) 138 Page - STMicroelectronics |
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138 / 270 page ![]() Electrical characteristics STM32H562xx and STM32H563xx 138/270 DS14258 Rev 5 Table 31. Typical and maximum current consumption in Run mode, code with data processing running from SRAM with cache 2-way Symbol Parameter Conditions fHCLK (MHz) Typ LDO Typ SMPS Max(1)(2) Unit TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(Run) Supply current in Run mode All peripherals disabled VOS0 250 30.8 17.2 35 64 86 - mA 215 26.7 14.4 31 60 81 - 200 24.6 13.3 29 58 80 - VOS1 200 21.2 10.5 24 44 61 93 180 19.5 9.7 22 42 58 90 168 18.0 9.0 21 41 57 89 150 16.2 8.4 19 39 55 87 VOS2 150 14.8 7.2 17 33 46 72 100 10.3 5.1 12 28 41 67 VOS3 100 9.4 4.5 11 23 33 55 60 6.1 2.9 8.0 20 30 52 25 3.2 1.7 5.0 17 27 49 1. Evaluated by characterization - Not tested in production. 2. The maximum values are given for LDO regulator ON. Refer to Section 5.3.3 for the SMPS maximum current consumption. |
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