STM32H562II datasheet(133/270 Pages) STMICROELECTRONICS

133 / 270 page

DS14258 Rev 5

133/270

STM32H562xx and STM32H563xx

Electrical characteristics

238

5.3.4

Operating conditions at power-up/down

Subject to general operating conditions for TA.

5.3.5

Embedded reset and power control block characteristics

The parameters given in Table 25 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 20.

Table 24. Operating conditions at power-up/down (regulator ON)

Symbol

Parameter

Min

Max

Unit

TVDD

VDD rise time rate

∞

μs/V

VDD fall time rate

∞

TVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

TVDDUSB

TVDDUSB rise time rate

∞

TVDDUSB fall time rate

∞

TVDDIO2

TVDDIO2 rise time rate

∞

TVDDIO2 fall time rate

∞

TVBAT

TVBAT rise time rate

∞

TVBAT fall time rate

∞

Table 25. Embedded reset and power control block characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after BOR0 detection VDD rising

377

550

μs

VPOR/PDR

Power-on/down reset threshold

(BORH_EN =0)

Rising edge

1.62

1.67

1.71

Falling edge

1.58

1.62

1.68

VBOR1

Brownout reset threshold 1

(BORH_EN =1)

Rising edge

2.04

2.10

2.15

Falling edge

1.95

2.00

2.06

VBOR2

Brownout reset threshold 2

(BORH_EN =1)

Rising edge

2.34

2.41

2.47

Falling edge

2.25

2.31

2.37

VBOR3

Brownout reset threshold 3

(BORH_EN =1)

Rising edge

2.63

2.70

2.78

Falling edge

2.54

2.61

2.68

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