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STM32H562II Datasheet(PDF) 130 Page - STMicroelectronics |
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STM32H562II Datasheet(HTML) 130 Page - STMicroelectronics |
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130 / 270 page ![]() Electrical characteristics STM32H562xx and STM32H563xx 130/270 DS14258 Rev 5 5.3.3 SMPS step-down converter The devices embed a high power efficiency SMPS step-down converter requiring external components. The SMPS current consumption can be determined using the following formula based on the maximum LDO current consumption provided in Section 5.3.7: IDDSMPS = IDDLDO × VCORE / (VDD × efficiency) IDDLDO is the current in LDO configuration given in the following tables, VCORE is the digital core supply (VCAP), and efficiency is defined in the following curves. Table 22. Supply voltage and maximum frequency configuration Symbol Parameter Conditions CEXT External capacitor for LDO enabled 2.2 μF(1) 1. This value corresponds to CEXT typical value. A variation of ±20% is tolerated ESR E quivalent series resistance of the external capacitor < 100 mΩ Table 23. Characteristics of SMPS step-down converter external components Symbol Parameter Conditions Min Typ Max Unit Cin Capacitance of external capacitor on VDDSMPS pins - - 4.7(1) -µF ESR of external capacitor 2.4 MHz - - 10 mΩ Cfilt Capacitance of external capacitor on VLXSMPS pin - - 220 - pF COUT Capacitance of external capacitor on VCAP pin - - 10(1) -µF ESR of external capacitor 2.4 MHz - 20 mΩ L Inductance of external inductor on VLXSMPS pin - - 2.2(1) -µH Series DC resistance All packages - - 150 mΩ WLCSP80 package, VDDSMPS > 3 V -- 300 ISAT DC current at which the inductance drops 30% from the value without current -1 - - A IRMS Average current for which the temperature of the inductor is raised 40 °C by the DC current -1 - - 1. Tolerance: -50% and + 30% for all conditions. |
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