STM32H562II datasheet(234/270 Pages) STMICROELECTRONICS

234 / 270 page

Electrical characteristics

STM32H562xx and STM32H563xx

234/270

DS14258 Rev 5

Ethernet interface characteristics

Unless otherwise specified, the parameters given in Table 124, Table 125, and Table 126

are derived from tests performed under the ambient temperature, frcc_c_ck frequency and

VDD supply voltage conditions summarized in Table 20, with the following configuration:

•

Output speed is set to OSPEEDRy[1:0] = 10

•

Capacitive load CL= 20 pF

•

Measurement points are done at CMOS levels: 0.5 VDD

•

I/O compensation cell activated

•

HSLV activated when VDD ≤ 2.5 V

Refer to Section 5.3.15 for more details on the input/output characteristics.

Table 124. Dynamic characteristics: Ethernet MAC signals for SMI (1)

Symbol

Parameter

Min

Typ

Max

Unit

tMDC

MDC cycle time (2.5 MHz)

400

403

Td(MDIO) Write data valid time

0.5

tsu(MDIO) Read data setup time

12.5

th(MDIO)

Read data hold time

1. Evaluated by characterization - Not tested in production.

Table 125. Dynamic characteristics: Ethernet MAC signals for RMII (1)

1. Evaluated by characterization - Not tested in production.

Symbol

Parameter

Min

Typ

Max

Unit

tsu(RXD) Receive data setup time

tih(RXD)

Receive data hold time

tsu(CRS) Carrier sense setup time

tih(CRS)

Carrier sense hold time

td(TXEN) Transmit enable valid delay time

7.5

9.5

td(TXD)

Transmit data valid delay time

7.5

15.5

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