STM32L4P5CE datasheet(200/311 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L4P5xx

200/311

DS12903 Rev 2

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin.

•

A current injection is applied to each input, output and configurable I/O pin.

These tests are compliant with EIA/JESD78 IC latch-up standard.

6.3.13

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal

product operation. However, in order to give an indication of the robustness of the

microcontroller in cases when abnormal injection accidentally happens, susceptibility tests

are performed on a sample basis during device characterization.

Table 68. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming to

ANSI/ESDA/JEDEC JS-001

All

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C,

conforming to

ANSI/ESDA/JEDEC JS-002

LQFP64

C2a

500

UFBGA169,

UFBGA132,

LQFP144,

WLCSP100

250

LQFP48,

UFQFPN48

-TBD

1. Guaranteed by characterization results.

Table 69. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +105 °C conforming to JESD78

II level A

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