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STM32L4P5CE Datasheet(PDF) 189 Page - STMicroelectronics |
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STM32L4P5CE Datasheet(HTML) 189 Page - STMicroelectronics |
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189 / 311 page ![]() DS12903 Rev 2 189/311 STM32L4P5xx Electrical characteristics 277 6.3.8 Internal clock source characteristics The parameters given in Table 59 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 59. HSI16 oscillator characteristics(1) 1. Guaranteed by characterization results. Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TJ=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) 2. Guaranteed by design. Duty Cycle - 45 - 55 % ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TJ= 0 to 85 °C -1 - 1 % TJ= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.71 V to 3.6 V -0.1 - 0.05 % tsu(HSI16)(2) HSI16 oscillator start-up time -- 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time -- 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption -- 155 190 μA |
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