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STM32L4P5CE Datasheet(PDF) 140 Page - STMicroelectronics |
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STM32L4P5CE Datasheet(HTML) 140 Page - STMicroelectronics |
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140 / 311 page ![]() Electrical characteristics STM32L4P5xx 140/311 DS12903 Rev 2 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 22 are derived from tests performed under the ambient temperature condition summarized in Table 21. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature conditions summarized in Table 21: General operating conditions. Table 22. Operating conditions at power-up / power-down(1) 1. At power-up, the VDD12 voltage should not be forced externally. Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate ENULP=0 10 ∞ ENULP=1 100 ∞ ms/V tVDDA VDDA rise time rate - 0 ∞ µs/V VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ µs/V VDDUSB fall time rate 10 ∞ tVDDIO2 VDDIO2 rise time rate - 0 ∞ µs/V VDDIO2 fall time rate 10 ∞ Table 23. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 |
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