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BS640HD9V Datasheet(PDF) 86 Page - Advanced Micro Devices

Part # BS640HD9V
Description  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  89 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

BS640HD9V Datasheet(HTML) 86 Page - Advanced Micro Devices

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84
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 1.8 V V
CC, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 20, “Memory Array Command Definitions,” on page 46 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
BGA BALL CAPACITANCE
Notes:
1.
Sampled, not 100% tested.
2.
Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
0.4
5
s
Excludes 00h programming prior to erasure
(Note 4)
4 Kword
0.2
5
Chip Erase Time
128 Mb
103
s
64 Mb
54
s
Word Programming Time
9
210
µs
Excludes system level overhead (Note 5)
Accelerated Word Programming Time
4
120
µs
Chip Programming Time
(Note 3)
128 Mb
75.5
226.5
s
64 Mb
38
114
s
Excludes system level overhead (Note 5)
Accelerated Chip
Programming Time
128 Mb
33
99
s
64 Mb
17
30
s
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



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