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BS640HD9V Datasheet(PDF) 54 Page - Advanced Micro Devices |
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BS640HD9V Datasheet(HTML) 54 Page - Advanced Micro Devices |
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54 / 89 page ![]() 52 Am29BDS128H/Am29BDS640H 27024B3 May 10, 2006 D A TA SH EE T device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase com- mand. If DQ3 is high on the second status check, the last command might not have been accepted. Table 23 shows the status of DQ3 relative to the other status bits. Table 23. Write Operation Status Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 4. The system may read either asynchronously or synchronously (burst) while in erase suspend. 5. The RDY pin acts a dedicated output to indicate the status of an embedded erase or program operation is in progress. This is available in the Asynchronous mode only. Status DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RDY (Note 5) Standard Mode Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0 Erase Suspend Mode Erase-Suspend- Read (Note 4) Erase Suspended Sector 1 No toggle 0 N/A Toggle High Impedance Non-Erase Suspended Sector Data Data Data Data Data High Impedance Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0 |
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