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BS640HD9V Datasheet(PDF) 61 Page - Advanced Micro Devices

Part # BS640HD9V
Description  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  89 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

BS640HD9V Datasheet(HTML) 61 Page - Advanced Micro Devices

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May 10, 2006 27024B3
Am29BDS128H/Am29BDS640H
59
D A TA
SH EE T
AC CHARACTERISTICS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 18.
Synchronous Burst Mode Read
Note: Figure assumes 7 wait states for initial access and automatic detect synchronous read. D0–D7 in data waveform indicate
the order of data within a given 8-word address range, from lowest to highest. Starting address in figure is the 7th address in
range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The Set Configuration Register command sequence
has been written with A18=1; device will output RDY with valid data.
Figure 19.
8-word Linear Burst with Wrap Around
Da
Da + 1
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#
tCAS
tAAS
tAVC
tAVD
tAAH
tOE
tRACC
tOEZ
tCEZ
tIACC
tBDH
7 cycles for initial access shown.
Hi-Z
Hi-Z
Hi-Z
12
3
4
56
7
tRDYS
tBACC
tACC
tCR
D6
D7
OE#
Data
Addresses
A6
AVD#
RDY
CLK
CE#
tCES
tACS
tAVC
tAVD
tACH
tOE
tIACC
tBDH
D0
D1
D5
D6
7 cycles for initial access shown.
Hi-Z
tRACC
1
2
3
456
7
tRDYS
tBACC
tACC
tCR



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