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BS640HD9V Datasheet(PDF) 27 Page - Advanced Micro Devices |
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BS640HD9V Datasheet(HTML) 27 Page - Advanced Micro Devices |
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27 / 89 page ![]() May 10, 2006 27024B3 Am29BDS128H/Am29BDS640H 25 D A TA SH EE T Table 9. System Interface String Table 10. Device Geometry Definition Addresses Data Description 1Bh 0017h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0019h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0004h Typical timeout per single byte/word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 0009h Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0004h Max. timeout for byte/word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Addresses Data Description 27h 001xh Device Size = 2N byte BDS128H = 0018h; BDS640H = 0017h 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 00xDh 0000h 0000h 0001h Erase Block Region 2 Information Address 31h: BDS128H = 00FDh; BDS640H = 007Dh 35h 36h 37h 38h 0007h 0000h 0020h 0000h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information |
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