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PLMT01SPHTA/EM Datasheet(PDF) 14 Page - Texas Instruments |
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PLMT01SPHTA/EM Datasheet(HTML) 14 Page - Texas Instruments |
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14 / 23 page ![]() CONV DATA OL OH SH OL CONV OL DATA JA CONV DATA CONV DATA t t PC I I 4096 PC T I V I V R t t t t 4096 2 4096 T ª º § · ª º § · § · § · u u u u u u u « » ¨ ¸ ¨ ¸ « » ¨ ¸ ¨ ¸ ¨ ¸ « » © ¹ © ¹ © ¹ ¬ ¼ © ¹ ¬ ¼ 14 LMT01-SP SNIS205 – JANUARY 2019 www.ti.com Product Folder Links: LMT01-SP Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Mounting, Temperature Conductivity, and Self-Heating The LMT01-SP can be applied easily in the same way as other integrated-circuit temperature sensors. It can be glued or cemented to a surface to ensure good temperature conductivity. The temperatures of the lands and traces to the leads of the LMT01-SP also affect the temperature reading, so they must be a thin as possible. The LMT01-SP comes in a hermetically sealed ceramic package and as such the IC is not susceptible to moisture or corrosion. Accompanying wiring and circuits should be kept insulated and dry to avoid excessive leakage and corrosion. Printed-circuit coatings are often used to ensure that moisture cannot corrode the leads or circuit traces. The junction temperature of the LMT01-SP is the actual temperature being measured by the device. The thermal resistance junction-to-ambient (RθJA) is the parameter (from Thermal Information) used to calculate the rise of a device junction temperature (self-heating) due to its average power dissipation. The average power dissipation of the LMT01-SP is dependent on the temperature it is transmitting as it effects the output pulse count and the voltage across the device. Equation 4 is used to calculate the self-heating in the die temperature of the LMT01- SP (TSH). where • TSH is the ambient temperature • IOL and IOH are the output low and high current level, respectively • VCONV is the voltage across the LMT01-SP during conversion • VDATA is the voltage across the LMT01-SP during data transmission • tCONV is the conversion time • tDATA is the data transmission time • PC is the output pulse count • RθJA is the junction to ambient package thermal resistance (4) Plotted in the curve Figure 24 are the typical average supply current (black line using left y-axis) and the resulting self-heating (red and violet lines using right y-axis) during continuous conversions. A temperature range of –50°C to 150°C, a VCONV of 5 V (red line) and 2.15 V (violet line) were used for the self-heating calculation. As can be seen in the curve, the average power supply current and thus the average self-heating changes linearly over temperature because the number of pulses increases with temperature. A negligible self-heating of about 45 m°C is observed at 150°C with continuous conversions. If temperature readings are not required as frequently as every 100 ms, self-heating can be minimized by shutting down power to the part periodically thus lowering the average power dissipation. |
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