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R5F5630ECDFB Datasheet(PDF) 146 Page - Renesas Technology Corp |
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R5F5630ECDFB Datasheet(HTML) 146 Page - Renesas Technology Corp |
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146 / 165 page ![]() R01DS0060EJ0100 Rev.1.00 Page 146 of 168 Sep 13, 2011 RX630 Group 5. Electrical Characteristics 5.5 USB Characteristics Figure 5.38 DP and DM Output Timing (Full-Speed) Figure 5.39 Test Circuit (Full-Speed) Table 5.20 On-Chip USB Full-Speed Characteristics (DP and DM Pin Characteristics) Conditions: VCC = AVCC0 = VCC_USB = 3.0 to 3.6 V, VREFH/VREFH0 = 3.0 V to AVCC0 VSS = AVSS0 = VREFL/VREFL0 = VCC_USB = 0 V PCLK = 24 to 50 MHz Ta = Topr High drive output is selected by the drive capacity control register. Item Symbol Min. Max. Unit Test Conditions Input characteristics Input high level voltage VIH 2.0 — V Input low level voltage VIL —0.8 V Differential input sensitivity VDI 0.2 — V | DP – DM | Differential common mode range VCM 0.8 2.5 V Output characteristics Output high level voltage VOH 2.8 3.6 V IOH = –200 µA Output low level voltage VOL 0.0 0.3 V IOL = 2 mA Cross-over voltage VCRS 1.3 2.0 V Figure 5.38 Rise time tLr 420 ns Fall time tLf 420 ns Rise/fall time ratio tLr / tLf 90 111.11 % tLr / tLf Output resistance ZDRV 28 44 Ω Rs = 22 Ω included DP, DM tLf tLr 90% 10% 10% 90% VCRS Observation point 22 22 50 pF 50 pF dp dm |
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