R8CSLASH13 datasheet(166/224 Pages) RENESAS

166 / 224 page

R8C/13 Group

16. Electrical Characteristics

Rev.1.20

Jan 27, 2006

page 155 of 205

REJ09B0111-0120

Table 16.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)

Byte program time(program/erase endurance

≤1000 times)

Program, Erase Voltage

Read Voltage

0.3

µs

Parameter

Standard

Min.Typ.Max

Unit

NOTES:

1. Referenced to VCC=AVcc=2.7 to 5.5V at Topr = -20°C to 85°C / -40°C to 85°C unless otherwise specified.

2. Definition of Program/Erase

The endurance of Program/Erase shows a time for each block.

If the program/erase number is “n” (n = 1000, 10000), “n” times erase can be performed for each block.

For example, if performing one-byte write to the distinct addresses on Block A of 2K-byte block 2048 times and then

erasing that block, the number of Program/Erase cycles is one time.

However, performing multiple writes to the same address before an erase operation is prohibited (overwriting

prohibited).

3. Numbers of Program/Erase cycles for which all electrical characteristics is guaranteed.

4. Table 16.5 applies for Block A or B when the Program/Erase cycles are more than 1000. The byte program time up to

1000 cycles are the same as that of the program area (see Table 16.4).

5. To reduce the number of Program/Erase cycles, a block erase should ideally be performed after writing in series as

many distinct addresses (only one time each) as possible. If programming a set of 16 bytes, write up to 128 sets and

then erase them one time. This will result in ideally reducing the number of Program/Erase cycles. Additionally,

averaging the number of Program/Erase cycles for Block A and B will be more effective. It is important to track the total

number of block erases and restrict the number.

6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase

command at least three times until the erase error disappears.

7. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representa-

tive.

8. -40

°C for D version.

9. The data hold time includes time that the power supply is off or the clock is not supplied.

Measuring condition

Symbol

–

Program/Erase Temperature

2.7

-20(-40)(8)

5.5

°C

–

Program/Erase endurance(2)

10000(3)

times

Time delay from Suspend Request until Erase Suspend

td(SR-ES)

Byte program time(program/erase endurance

>1000 times)

Block erase time(program/erase endurance

≤1000 times)

Block erase time(program/erase endurance

>1000 times)

–

Data hold time(9)

–

Ambient temperature

= 55 °C

0.2

400

µs

year

Erase Suspend Request Interval

–

FMR46

Erase-suspend request

(interrupt request)

td(SR-ES)

Figure 16.2 Time delay from Suspend Request until Erase Suspend

R8C/13 Datasheet(PDF) 166 Page - Renesas Technology Corp

R8C/13 Datasheet(HTML) 166 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL