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R5F5630ECDFB Datasheet(PDF) 154 Page - Renesas Technology Corp |
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R5F5630ECDFB Datasheet(HTML) 154 Page - Renesas Technology Corp |
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154 / 165 page  R01DS0060EJ0100 Rev.1.00 Page 154 of 168 Sep 13, 2011 RX630 Group 5. Electrical Characteristics 5.12 ROM (Flash Memory for Code Storage) Characteristics Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the range from one to the minimum number.) Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number. Table 5.29 ROM (Flash Memory for Code Storage) Characteristics Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0 VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V Temperature range for the programming/erasure operation: Ta = Topr Item Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Min. Typ. Max. Min. Typ. Max. Programming time NPEC 100 hours 128 bytes tP128 — 2.8 28 — 1 10 ms 4 Kbytes tP4K — 63 140 — 23 50 ms 16 Kbytes tP16K — 252 560 — 90 200 ms Programming time NPEC > 100 hours 128 bytes tP128 — 3.4 33.6 — 1.2 12 ms 4 Kbytes tP4K — 75.6 168 — 27.6 60 ms 16 Kbytes tP16K — 302.4 672 — 108 240 ms Erasure time NPEC 100 hours 4 Kbytes tE4K — 50 120 — 25 60 ms 16 Kbytes tE16K — 200 480 — 100 240 ms Erasure time NPEC > 100 hours 4 Kbytes tE4K — 60 144 — 30 72 ms 16 Kbytes tE16K — 240 576 — 120 288 ms Reprogram/erase cycle*1 NPEC 1000*2 — — 1000*2 —— Times Suspend delay time during programming tSPD — — 400 — — 120 μs First suspend delay time during erasing (in suspend priority mode) tSESD1 — — 300 — — 120 μs Second suspend delay time during erasing (in suspend priority mode) tSESD2 —— 1.7 — —1.7 ms Suspend delay time during erasing (in erasure priority mode) tSEED —— 1.7 — —1.7 ms Data hold time*3 tDRP 10 — — 10 — — Year FCU reset time tFCUR 35 — — 35 — — μs |
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