R5F5630ECDFB datasheet(155/165 Pages) RENESAS

155 / 165 page

R01DS0060EJ0100 Rev.1.00

Page 155 of 168

Sep 13, 2011

RX630 Group

5. Electrical Characteristics

5.13

E2 Flash Characteristics

Note 1. Definition of reprogram/erase cycle:

The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),

erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different

addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasing is not enabled (over writing is prohibited).

Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the

range from one to the minimum number.)

Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.

Table 5.30

E2 Flash Characteristics

Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0

VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V

Temperature range for the programming/erasure operation: Ta = Topr

Item

Symbol

FCLK = 4 MHz

20 MHz

≤ FCLK ≤ 50 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

NPEC  100 hours

2 bytes

tDP2

—

0.7

—

0.25

Programming time

NPEC > 100 hours

2 bytes

tDP2

—

0.7

—

0.25

Erasure time

NPEC  100 hours

32 bytes

tDE32

—4

—2

Erasure time

NPEC > 100 hours

32 bytes

tDE32

—7

—4

Blank check time

2 bytes

tDBC2

—

100

—

μs

Reprogram/erase cycle*1

NDPEC

100000*2

—

100000*2

——

Times

Suspend delay time during programming

tDSPD

—

250

—

120

μs

First suspend delay time during erasing

(in suspend priority mode)

tDSESD1

—

250

—

120

μs

Second suspend delay time during erasing

(in suspend priority mode)

tDSESD2

—

500

—

300

μs

Suspend delay time during erasing

(in erasure priority mode)

tDSEED

—

500

—

300

μs

Data hold time*3

tDDRP

—

Year

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