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SA56004GD Datasheet(PDF) 17 Page - NXP Semiconductors |
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SA56004GD Datasheet(HTML) 17 Page - NXP Semiconductors |
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17 / 36 page ![]() SA56004X_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 22 May 2008 17 of 36 NXP Semiconductors SA56004X Digital temperature sensor with overtemperature alarms Event F: Three consecutive measurements have been made with the remote temperature below the RCS − TH threshold; the T_CRIT output is de-activated (goes HIGH). Event G: The remote temp falls below the Remote LOW setpoint. Event H: Three consecutive measurements are made with the temp below the Remote LOW setpoint; ALERT output is activated (goes LOW). Event I: The ALERT output is de-activated (goes HIGH) after a above_low_limit temperature measurement is completed. 7.9.4 Remote diode selection To measure the remote temperature or the temperature of an externally attached diode, the device automatically forces two successive currents of about 160 µA and 10 µAatD+ pin. It measures the voltage (VBE) between D+ and D−, detects the difference between the two VBE voltages or the ∆VBE and then converts the ∆VBE into a temperature data using the basic PTAT voltage formula as shown in Equation 1. The device typically takes about 38 ms to perform a measurement during each conversion period or cycle, which is selectable by programming the conversion rate register. (1) Where: n = diode ideality factor k = Boltzmann’s constant T = absolute temperature ( °K) = 273 °C+T (°C) q = electron charge ln = natural logarithm l2, l1 = two source currents Because the device does not directly convert the sensed VBE as in the old method of temperature measurement systems, the VBE calibration is not required. Furthermore, the device remote temperature error is adjusted at the manufacturer to meet the specifications with the use of the reference diode-connected transistors such as the 2N3904/2N3906. The diode type to be used in customer applications must have the characteristics as close to the 2N3904/2N3906 as possible in order to obtain optimal results. Finally, to prevent the effects of system noise on the measured VBE signals, an external capacitor of about 2200 pF connected between the D+ and D − pins as well as the grounded-shield cable for the diode connection wires are recommended. 7.9.5 Diode fault detection The SA56004X is designed with circuitry to detect the fault conditions of the remote diode. When the D+ pin is shorted to VDD or floating, the Remote Temperature High Byte (RTHB) register is loaded with +127 °C, the Remote Temperature Low Byte (RTLB) register is loaded with 0 °C, and the OPEN bit (bit 2 of the Status register) is set. Under the above conditions of D+ shorted to VDD or floating, if the Remote T_CRIT setpoint is set less than +127 °C, and T_CRIT Mask are disabled, then, the T_CRIT output pins will be pulled ∆V BE n kT q ------ × l2 l1 ----- ln × = |
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