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MB9AF132KB Datasheet(PDF) 76 Page - SPANSION |
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MB9AF132KB Datasheet(HTML) 76 Page - SPANSION |
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76 / 89 page  D a t a S h e e t June 9, 2015, MB9A130LB_DS706-00066-2v0-E 73 CONFIDENTIAL 7. Flash Memory Write/Erase Characteristics (1) Write / Erase time (VCC = 2.0V to 5.5V, TA = - 40°C to + 85°C) Parameter Value Unit Remarks Typ* Max* Sector erase time Large Sector 1.6 7.5 s Includes write time prior to internal erase Small Sector 0.4 2.1 Half word (16-bit) write time 25 400 μs Not including system-level overhead time. Chip erase time 4 19.2 s Includes write time prior to internal erase *: The typical value is immediately after shipment, the maximam value is guarantee value under 100,000 cycle of erase/write. (2) Write cycles and data hold time Erase/write cycles (cycle) Data hold time (year) Remarks 1,000 20* 10,000 10* 100,000 5* *: At average + 85C |
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