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MPC8314EVRADDA Datasheet(PDF) 16 Page - Freescale Semiconductor, Inc

Part # MPC8314EVRADDA
Description  PowerQUICC II Pro Processor Hardware Specifications
PDF  101 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC8314EVRADDA Datasheet(HTML) 16 Page - Freescale Semiconductor, Inc

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MPC8314E PowerQUICC II Pro Processor Hardware Specifications, Rev. 2
16
Freescale Semiconductor
DDR and DDR2 SDRAM
This table provides the PLL lock times.
7
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8314E. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
7.1 DDR and DDR2 SDRAM DC Electrical Characteristics
This table provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
MPC8314E when GVDD(typ) = 1.8 V.
Note:
1. tPCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary
clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_SYS_CLKIN_DIV.
2. tSYS_CLK_IN is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode.
3. POR configuration signals consists of CFG_RESET_SOURCE[0:3] and CFG_SYS_CLKIN_DIV.
4. The parameter names CFG_SYS_CLKIN_DIV and CFG_CLKIN_DIV are used interchangeably in this document.
Table 10. PLL Lock Times
Parameter/Condition
Min
Max
Unit
Note
System PLL lock times
100
s—
e300 core PLL lock times
100
s—
SerDes (SGMII/PCI Exp Phy) PLL lock times
100
s—
USB phy PLL lock times
100
s—
Table 11. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Note
I/O supply voltage
GVDD
1.7
1.9
V
1
I/O reference voltage
MVREF
0.49
 GVDD
0.51
 GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF+ 0.125
GVDD + 0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–9.9
9.9
A4
Output high current (VOUT = 1.420 V,
GVDD= 1.7V)
IOH
–13.4
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
mA
Note:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5
 GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
V
OUT GVDD.
Table 9. RESET Initialization Timing Specifications (continued)



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