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ST1PS02 Datasheet(PDF) 6 Page - STMicroelectronics |
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ST1PS02 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 23 page ![]() 5 Electrical characteristics C1= 10 µF, C2= 10 µF, C3= 10 µF, L1=2.2 µH, VIN=3.6 V, VEN= VIN, VOUT=1.8 V, TA=25 °C unless otherwise specified. Table 6. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit General section IQ Quiescent current EN=VIN, AUX=GND, IOUT=0 µA, VOUT=1.8 V, device does not switch, VIN=2.5 V to 5.5 V 500 1000 nA EN=VIN, AUX=VIN, IOUT=ouA, VOUT=1.8 V, device not switching 2 4 µA ISD Shutdown current EN=GND, shutdown current into VIN 10 200 nA VUVLO Undervoltage lockout threshold VIN rising 1.63 1.72 V VIN falling 1.51 1.57 V Hysteresis 65 mV Vth100%+ 100% mode leave threshold VIN rising, 100% mode is disabled with VIN = VOUTnom + Vth100%+ 300 mV Vth100%- 100% mode enter threshold VIN falling, 100% mode is entered with VIN = VOUTnom + Vth100%- 200 Output voltage VOUT Output voltage range Output voltages are selected with pins D0, D1, D2 1.0 3.3 V Output voltage accuracy VIN = 3.6 V, whole VOUT range, IOUT=100 mA -1.5 1.5 % tONmin Minimum on-time VIN = 3.6 V, VOUT= 2 V, IOUT= 0 mA 225 ns tOFFmin Minimum off-time VIN=2.3V 50 ns tstartupd Start-up delay time VEN from low to high, VIN = 3.6 V, VOUT = 1.8 V 1 5 ms ROUTDIS Output discharge MOSFET on- resistance VEN= GND 30 Ω Logic inputs (EN, D0, D1) VIL Low level input voltage threshold VIN=1.8 V to 5.5 V 0.3 V VIH High level input voltage threshold 1 Power switch RDS(on) High-side MOSFET on- resistance VIN = 3.6 V, Isw = 400 mA 0.38 0.45 Ω Low-side MOSFET on-resistance 0.14 0.2 ILIM1 High-side MOSFET switch current limit 1.8 V ≤ VIN ≤ 5.5 V, CL=GND 750 1000 mA ILIM2 High-side MOSFET switch current limit 1.8 V ≤ VIN ≤ 5.5 V, CL=1 MΩ 500 800 ILIM3 High-side MOSFET switch current limit 1.8 V ≤ VIN ≤ 5.5 V, CL=2.2 MΩ 250 mA ST1PS02 Electrical characteristics DS13206 - Rev 1 page 6/23 |
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