2N6284G. datasheet(2/7 Pages) ONSEMI

2 / 7 page

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

100

125

200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

160

140

150

100

120

175

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 0.1 Adc, IB = 0)

2N6286

2N6284, 2N6287

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

(VCE = 50 Vdc, IB = 0)

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

−

0.5

5.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 20 Adc, VCE = 3.0 Vdc)

hFE

750

100

18,000

−

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 40 mAdc)

(IC = 20 Adc, IB = 200 mAdc)

VCE(sat)

−

2.0

3.0

Vdc

Base−Emitter On Voltage

(IC = 10 Adc, VCE = 3.0 Vdc)

VBE(on)

−

2.8

Vdc

Base−Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

VBE(sat)

−

4.0

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small−Signal Short−Circuit

Forward Current Transfer Ratio

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

|hfe|

4.0

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6284

2N6286, 2N6287

Cob

−

400

600

Small−Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

300

−

2. Indicates JEDEC Registered Data.

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

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