SI8711CD-B-IM datasheet(4/36 Pages) SILABS

4 / 36 page

Si87xx

Preliminary Rev. 0.5

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

VDD Supply Voltage

(Open Collector Output)

VDD

3—

Input Current

Si87xxA Devices

Si87xxB Devices

Si87xxC Devices

IF(ON)

—

Operating Temperature (Ambient)

–40

—

125

°C

Table 2. Electrical Characteristics

VDD = 5 V; GND = 0 V; TA = –40 to +125 °C; typical specs at 25 °C

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

DC Parameters

Supply Voltage

VDD

Open collector output

—

Supply Current

IDD

Output high or low (VDD = 5 to 30 V)

—

1.7

Input Current Threshold

IF(TH)

Si87xxA devices

Si87xxB devices

Si87xxC devices

—

Input Current Rising

Edge Hysteresis

IHYS

Si87xxA devices

Si87xxB devices

Si87xxC devices

—

0.17

0.34

0.17

—

Input Forward Voltage

(OFF)

VF(OFF) Measured at ANODE with respect to

CATHODE.

——

Input Forward Voltage

(ON)

VF(ON) Measured at ANODE with respect to

CATHODE.

1.7

—

2.8

Input Reverse

Breakdown Voltage

BVR

Ensures that reverse current is lim-

ited to a safe level.

–0.3

—

Input Capacitance

f=100kHz,

VF =0V,

VF =2V

—

Logic Low Output

Voltage

VOL

IOL =3mA, VDD = 3.3 or 5 V

IOL =13mA, VDD =5.5 V

—

0.4

0.7

Logic High Output

Current

IOH

VDD =VOUT =5.5 V

VDD =VOUT =24V

—

0.5

µA

Peak Output Current

IOPK

Peak DC collector current drive

(VDD =5V)

—50

—

Output Low Impedance

ROL

——



Pull-up Resistor

RPU

Using internal pull-up

—



Enable High Min

VEH

2—

Enable Low Max

VEL

——

0.8

Enable High Current

Draw

IEH

VDD =VEH =5V

—

µA

Enable Low Current

Draw

IEL

VDD =5V, VEL = 0 V

—

–10

µA

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