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SI8711CD-B-IM Datasheet(PDF) 5 Page - Silicon Laboratories |
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SI8711CD-B-IM Datasheet(HTML) 5 Page - Silicon Laboratories |
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5 / 36 page ![]() Si87xx Preliminary Rev. 0.5 5 AC Switching Parameters (VDD =5V, RL =350 , CL = 15 pF) Maximum Data Rate FDATA Si87xxA devices Si87xxB devices Si87xxC devices DC DC DC — — — 15 15 1 MBPS MBPS MBPS Minimum Pulse Width MPW Si87xxA devices Si87xxB devices Si87xxC devices 66 66 1 — — — — — — ns ns µs Propagation Delay (Low-to-High) tPLH CL = 15 pF using 350 pull-up — — 60 ns Propagation Delay (High-to-Low) tPHL CL = 15 pF using 350 pull-up — — 60 ns Pulse Width Distortion PWD | tPLH – tPHL |— — 20 ns Propagation Delay Skew tPSK(p-p) tPSK(P-P) is the magnitude of the dif- ference in prop delays between dif- ferent units operating at same supply voltage, load, and ambient temp. —— 20 ns Rise Time tR CL = 15 pF using 350 pull-up — 15 — ns Fall Time tF CL = 15 pF using 350 pull-up — 5 — ns Device Startup Time tSTART —— 40 µs Common Mode Transient Immunity CMTI Output = low or high IF = 3 mA for Si87xxA devices IF = 6 mA for Si87xxB devices IF = 3 mA for Si87xxC devices 20 35 20 35 50 35 — — — kV/µs kV/µs kV/µs Table 2. Electrical Characteristics (Continued) VDD = 5 V; GND = 0 V; TA = –40 to +125 °C; typical specs at 25 °C Parameter Symbol Test Condition Min Typ Max Unit |
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