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6116LA55DB Datasheet(PDF) 2 Page - Renesas Technology Corp |
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6116LA55DB Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 13 page ![]() 2 6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Jul.17.20 Pin Configurations(1) Absolute Maximum Ratings(1) Truth Table(1) Pin Description Capacitance (TA = +25°C, f = 1.0 MHZ) DIP/SOIC Top View NOTE: 1. This parameter is determined by device characterization, but is not production tested. Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 0V 8 pF CI/O I/O Capacitance VOUT = 0V 8 pF 3089 tbl 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC +0.5V. Symbol Rating Com'l. Mil. Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +7.0 -0.5 to +7.0 V TA Operating Temperature 0 to +70 -55 to +125 o C TBIAS Temperature Under Bias -55 to +125 -65 to +135 o C TSTG Storage Temperature -55 to +125 -65 to +150 o C PT Power Dissipation 1.0 1.0 W IOUT DC Output Current 50 50 mA 3089 tbl 04 Name Description A0 - A10 Address Inputs I/O0 - I/O7 Data Input/Output CS Chip Select WE Write Enable OE Output Enable VCC Power GND Ground 3089 tbl 01 NOTE: 1. H = VIH, L = VIL, X = Don't Care. Mode CS OE WE I/O Standby H X X High-Z Read L L H DATAOUT Read L H H High-Z Write L X L DATAIN 3089 tbl 02 3089 drw 02 5 6 7 8 9 10 11 12 GND 1 2 3 4 24 23 22 21 20 19 18 17 PTG24 CD24 SD24 PSG24 A5 A4 A 3 A2 A1 A0 I/O 0 I/O 1 VCC A9 WE A10 I/O5 I/O 4 OE 16 15 14 13 A 7 A6 I/O7 I/O6 CS A8 I/O 2 I/O 3 NOTE: 1. This text does not indicate orientation of actual part-marking. |
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