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Jul.17.20

Features

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◆ High-speed access and chip select times

– Commercial: 15/20/25ns (max.)

– Industrial: 20/25ns (max.)

– Military:20/25/35/45/55/70/90/120/150ns(max.)

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◆ Low-power consumption

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◆ Battery backup operation

– 2V data retention voltage (LA version only)

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◆ Produced with advanced CMOS high-performance

technology

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◆ CMOS process virtually eliminates alpha particle soft-error

rates

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◆ Input and output directly TTL-compatible

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◆ Static operation: no clocks or refresh required

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◆ Availableinceramic24-pinDIP,ceramicandplastic24-pinThin

Dip and 24-pin SOIC

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◆ Military product compliant to MIL-STD-833, Class B

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Industrial temperature range (–40°C to +85°C) is available

for selected speeds

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Green parts available, see ordering information

Description

TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganized

as2Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOS

technology.

Access times as fast as 15ns are available. The circuit also offers a

reduced power standby mode. When CS goes HIGH, the circuit will

automaticallygoto,andremainin,astandbypowermode,aslongasCS

remainsHIGH.Thiscapabilityprovidessignificantsystemlevelpowerand

coolingsavings. Thelow-power(LA)versionalsooffersabatterybackup

dataretentioncapabilitywherethecircuittypicallyconsumesonly1µWto

4µWoperatingoffa2Vbattery.

AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully

staticasynchronouscircuitryisused,requiringnoclocksorrefreshingfor

operation.

TheIDT6116SA/LAispackagedin24-pin300milplasticDIP,24-pin

600miland300milceramicDIP,or24-leadgull-wingSOICprovidinghigh

board-levelpackingdensities.

Militarygradeproductismanufacturedincomplianceto MIL-STD-883,

Class B, making it ideally suited to military temperature applications

demandingthehighestlevelofperformanceandreliability.

Functional Block Diagram

CS

A0

A10

I/O0

I/O7

OE

WE

128 X 128

MEMORY

ARRAY

I/O CONTROL

ADDRESS

DECODER

INPUT

DATA

CIRCUIT

CONTROL

CIRCUIT

GND

3089 drw 01

VCC

,

CMOS Static RAM

16K (2K x 8-Bit)

6116SA

6116LA