4

6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

Jul.17.20

NOTES:

1. TA = + 25°C

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but is not production tested.

DC Electrical Characteristics(1)(continued)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.

Data Retention Characteristics Over All Temperature Ranges

(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)

Typ.(1)

VCC @

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0V

3.0V

2.0V

3.0V

Unit

VDR

VCC for Data Retention

____

2.0

____

____

____

____

V

ICCDR

Data Retention Current

MIL.

COM'L.

____

____

0.5

0.5

1.5

1.5

200

20

300

30

μA

tCDR(3)

Chip Deselect to Data

Retention Time

CS > VHC

VIN > VHC or < VLC

____

0

____

____

____

ns

tR(3)

Operation Recovery Time

tRC(2)

____

____

____

____

ns

IILII

Input Leakage Current

____

____

____

22

μA

3089 tbl 10

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