5

Electrical characteristics

C1 = 10 µF, C2 = 10 µF, C3 = 10 µF, C4 = 10 µF, L1 = 2.2 µH, VIN = 3.6 V, VEN = VIN, VOUT = 1.8 V, TA = 25 °C

unless otherwise specified.

Table 6. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

General section

IQ

Quiescent current

EN = VIN, AUX = GND,

device does not switch (VOUT pin voltage > VOUT

setting value)

-

500

850

nA

ISD

Shutdown current

EN = GND, shutdown current into VIN

-

10

200

nA

VUVLO

Undervoltage lockout

threshold

VIN rising

-

1.63 1.72

V

VIN falling

1.51 1.57

-

V

Hysteresis

-

65

-

mV

Vth100%+

100% mode leave threshold

VIN rising, 100% mode is disabled with VIN =

VOUTnom + Vth100%+

-

300

-

mV

Vth100%-

100% mode enter threshold

VIN falling, 100% mode is entered with VIN =

VOUTnom + Vth100%-

-

200

-

Output voltage

VOUT

Output voltage range

Output voltages are selected with pins D0, D1, D2

1.6

-

3.3

V

Output voltage accuracy

VIN = 3.6 V, whole VOUT range, IOUT = 100 mA(1)

-1.5

-

1.5

%

tONmin

Minimum on-time

VIN = 3.6 V, VOUT = 2.1 V, IOUT = 0 A

-

225

-

ns

tOFFmin

Minimum off-time

VIN = 2.3V

-

50

-

ns

tstartupd

Start-up delay time

VEN from low to high, VIN = 3.6 V, VOUT = 1.8 V

-

1.7

-

ms

ROUTDIS

Output discharge MOSFET

on-resistance

VEN = GND

(For AQTR version only),

IOUT = -10 mA

-

30

-

Ω

Logic inputs (EN, AUX)

VIL_L1

Low level input voltage

threshold

VIN = 1.8 to 5.5 V

-

-

0.3

V

VIH_L1

High level input voltage

threshold

1.1

-

-

Logic inputs (D0, D1, D2)

VIL_L2

Low level input voltage

threshold

VIN = 3.6 V

0.3

V

VIH_L2

High level input voltage

threshold

1.1

Power switch

RDS(on)

High-side MOSFET on-

resistance

VIN = 3.6 V, Isw = 100 mA

-

0.45 0.60

Ω

Low-side MOSFET on-

resistance

-

0.23 0.35

ST1PS03

Electrical characteristics

DS13801 - Rev 1

page 6/25