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SST26WF080BA Datasheet(PDF) 26 Page - Microchip Technology

Part # SST26WF080BA
Description  1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
PDF  96 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26WF080BA Datasheet(HTML) 26 Page - Microchip Technology

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SST26WF040B/040BA SST26WF080B/080BA
DS20005283C-page 26
 2014-2017 Microchip Technology Inc.
5.18
Block-Erase
The Block-Erase instruction clears all bits in the
selected block to ‘1’. Block sizes can be 8 KByte, 32
KByte or 64 KByte depending on address, see Figure
3-1, Memory Map, for details. A Block-Erase instruction
applied to a protected memory area will be ignored.
Prior to any write operation, execute the WREN instruc-
tion. Keep CE# active low for the duration of any com-
mand sequence.
To execute a Block-Erase operation, the host drives
CE# low then sends the Block-Erase command cycle
(D8H), three address cycles, then drives CE# high.
Address bits AMS-A13 determine the block address
(BAX); the remaining address bits can be VIL or VIH. For
32 KByte blocks, A14:A13 can be VIL or VIH; for 64
KByte blocks, A15:A13 can be VIL or VIH. Poll the BUSY
bit in the Status register, or wait TBE, for the completion
of the internal, self-timed, Block-Erase operation. See
Figures 5-21 and 5-22 for the Block-Erase sequence.
FIGURE 5-21:
BLOCK-ERASE SEQUENCE (SQI)
FIGURE 5-22:
BLOCK-ERASE SEQUENCE (SPI)
20005283 F08.0
MODE 3
0
1
SCK
SIO(3:0)
CE#
C1 C0
MODE 0
2
A5 A4
MSN LSN
4
A3 A2
6
A1 A0
Note: MSN = Most Significant Nibble,
LSN = Least Significant Nibble
C[1:0] = D8H
CE#
SO
SI
SCK
ADDR
01 2 3 4 5 6 7 8
ADDR
ADDR
D8
HIGH IMPEDANCE
15 16
23 24
31
MODE 0
MODE 3
20005283 F58.0
MSB
MSB



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