5

Electrical characteristics

CIN= 10 µF, COUT= 10 µF, L=2.2 µH, RPU=1 MOhm, VIN=3.6 V, VEN= VIN, VOUT=1.8 V, TA=25 °C unless

otherwise specified.

Table 6. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

General section

IQ

Quiescent current

EN = VIN, IOUT = 0 A, VOUT = 1.8 V, device does not

switch, VIN = 2.5 V to 5.5 V

500 1000

nA

ISD

Shutdown current

EN = GND, shutdown current into VIN

10

200

nA

VUVLO

Undervoltage lockout threshold

VIN rising

1.63 1.72

V

VIN falling

1.51

1.57

V

Hysteresis

65

mV

Vth100%+

100% mode leave threshold

VIN rising, 100% mode is disabled with VIN =

VOUTnom + Vth100%+

300

mV

Vth100%-

100% mode enter threshold

VIN falling, 100% mode is entered with VIN =

VOUTnom + Vth100%-

200

Output voltage

VOUT

Output voltage range

Output voltages are selected with pins D0, D1

0.625

3.3

V

Output voltage accuracy

VIN = 3.6 V, whole VOUT range, IOUT=100 mA

-1.5

1.5

%

tONmin

Minimum on-time

VIN = 3.6 V, VOUT= 2 V, IOUT= 0 A

200

ns

tOFFmin

Minimum off-time

VIN=2.3V

50

ns

tstartupd

Start-up delay time

VEN from low to high, VIN = 3.6 V, VOUT = 1.8 V

0.5

4

ms

ROUTDIS

Output discharge MOSFET on-

resistance

VEN= GND

30

Ω

Logic inputs (EN, D0, D1)

VIL

Low level input voltage threshold

VIN=1.8 V to 5.5 V

0.3

V

VIH

High level input voltage

threshold

1

Power switch

RDS(on)

High-side MOSFET on-

resistance

VIN = 3.6 V, Isw = 400 mA

0.38 0.45

Ω

Low-side MOSFET on-

resistance

0.14

0.2

ILIM1

High-side MOSFET switch

current limit

1.8 V ≤ VIN ≤ 5.5 V

500

1150

mA

ILIMSS

High-side MOSFET switch

current limit during soft-start

Reduced switch current limit during soft-start period

(typ. 400 µs)

180

280

360

Power Good output (PGOOD)

Vthpg

Power Good threshold voltage

Rising output voltage on VOUT pin, referred to VOUT

selected (D0, D1)

95

97.5

%

VthpgH

Hysteresis

-6

-4.25 -2.5

ST1PS01

Electrical characteristics

DS12799 - Rev 5

page 6/20