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STA8089FG Datasheet(PDF) 21 Page - STMicroelectronics |
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STA8089FG Datasheet(HTML) 21 Page - STMicroelectronics |
21 / 34 page ![]() DocID027175 Rev 8 21/34 STA8089FG Electrical characteristics 33 Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. VESD-HBM Electrostatic discharge, human body model(1) -2 2 kV VESD-CDM Electrostatic discharge, charge device model(2) -250 250 V 1. Pins sustaining only ±500 V are: 12, 13, 21, 27, 28, 29, 30 and 31 2. Pin 9 (LNA_IN) sustains only ±100 V. Table 8. Voltage characteristics (continued) Symbol Parameter Min. Max. Unit Table 9. Thermal characteristics Symbol Parameter Min. Max. Unit Toper Operative ambient temperature -40 85 °C Tj Operative junction temperature -40 125 °C Tst Storage temperature -55 150 °C Rj-amb Thermal resistance junction to ambient(1) 1. According to JEDEC specification on a 2 layers board. 24.4 °C/W Table 10. Frequency limits Symbol Parameter Test condition Min. Typ. Max. Unit FCLK Operating ARM9 CPU frequency V DDD = 1.2 V; TC = 85 °C(1) 1. Not tested in production. —— 196 MHz FAHB AHB frequency — — 49 MHz Table 11. Power consumption Symbol Parameter Test condition Min. Typ. Max. Unit PRF RFIP power (total VINL2) G2 = GPS/Galileo; Tamb = 25 °C; VINL2 = 1.8 V —25 — mW G2 + GLONASS; Tamb = 25 °C; VINL2 = 1.8 V —35 — mW G2 + COMPASS; Tamb = 25 °C; VINL2 = 1.8 V —35 — mW PMVR(1) Switchable area power; (total VINL1) fARM = 196 MHz; fAHB = 49 MHz; Tamb = 25 °C; VINL1 = .8 V; UART active; other peripherals inactive —90 — mW |
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