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EDBA164B4PR-1DITF-R Datasheet(PDF) 46 Page - Micron Technology |
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EDBA164B4PR-1DITF-R Datasheet(HTML) 46 Page - Micron Technology |
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46 / 152 page ![]() Figure 17: READ Output Timing – tDQSCK (MAX) RL - 1 RL RL + BL/ 2 CK# CK DQS# DQS DQ tLZ(DQS) D OUT D OUT D OUT D OUT tHZ(DQS) tRPRE tRPST tDQSCKmax tQH tLZ(DQ) tHZ(DQ) tDQSQmax tCL tCH tQH tDQSQmax Transitioning data Notes: 1. tDQSCK can span multiple clock periods. 2. An effective burst length of 4 is shown. Figure 18: READ Output Timing – tDQSCK (MIN) RL - 1 RL RL + BL/ 2 CK# CK DQS# DQS DQ tLZ(DQS) D OUT D OUT D OUT D OUT tHZ(DQS) tRPRE tDQSCKmin tQH tLZ(DQ) tDQSQmax tCL tCH tQH tDQSQmax tRPST tHZ(DQ) Transitioning data Note: 1. An effective burst length of 4 is shown. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Burst READ Command 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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