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2SJ604. Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part # 2SJ604.
Description  P-Channel 60 V (D-S) 175 째C MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

2SJ604. Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  2SJ604. Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd 2SJ604. Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
VDS - Drain-to-Source Voltage (V)
3 V
0
10
20
30
40
50
60
70
80
0
1234
5
VGS = 10 V thru 4 V
0
20
40
60
80
100
0
102030
405060
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
25 °C
125 °C
VDS - Drain-to-Source Voltage (V)
Crss
0
1000
2000
3000
4000
5000
6000
0
102030
405060
Ciss
Coss
0
10
20
30
40
50
60
70
80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
25 ° C
- 55 °C
TC = 125 ° C
ID - Drain Current (A)
0
0.01
0.02
0.03
0.04
0.05
0
16324864
80
VGS =10V
VGS =4.5 V
Qg - Total Gate Charge (nC)
0
2
4
6
8
10
0
1020
304050
6070
8090
100
ID = 14.4 A
VDS = 30 V
3
2SJ604.
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052



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