2SJ604. datasheet(1/7 Pages) VBSEMI

Part #	2SJ604.

Description	P-Channel 60 V (D-S) 175 째C MOSFET

PDF	7 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

•100 % Rg and UIS Tested

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

PRODUCT SUMMARY

VDS (V)

- 60

RDS(on) () at VGS = - 10 V

0.0155

RDS(on) () at VGS = - 4.5 V

0.0200

ID (A)

- 50

Configuration

Single

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TC = 25 °C

ID

- 50

A

TC = 125 °C

- 38

Continuous Source Current (Diode Conduction)a

IS

- 50

Pulsed Drain Currentb

IDM

- 200

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 52

Single Pulse Avalanche Energy

EAS

135

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

136

W

TC = 125 °C

45

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

1.1

TO-251

S

GD

Top View

Drain Connected to

Drain-Tab

1

2SJ604.

www.VBsemi.tw

E-mail：China@VBsemi TEL:86-755-83251052

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