2SJ604. datasheet(2/7 Pages) VBSEMI

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Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 60

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 1.5

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = - 60 V

- 1

μA

VGS = 0 V

VDS = - 60 V, TJ = 125 °C

- 50

VGS = 0 V

VDS = - 60 V, TJ = 175 °C

- 150

On-State Drain Currenta

ID(on)

VGS = - 10 V

VDS- 5 V

- 50

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V

ID = - 17 A

0.0135

0.0155



VGS = - 10 V

ID = - 50 A, TJ = 125 °C

0.026

VGS = - 10 V

ID = - 50 A, TJ = 175 °C

0.032

VGS = - 4.5 V

ID = - 14 A

0.017

0.020

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 17 A

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = - 25 V, f = 1 MHz

4730

5910

Output Capacitance

Coss

485

606

Reverse Transfer Capacitance

Crss

330

410

Total Gate Chargec

VGS = - 10 V

VDS = - 30 V, ID = - 50 A

150

Gate-Source Chargec

Qgs

-15

Gate-Drain Chargec

Qgd

-21

Gate Resistance

f = 1 MHz

1.47

2.9

4.42



Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 0.6 

ID  - 50 A, VGEN = - 10 V, Rg = 6.0 

-15

Rise Timec

-12

Turn-Off Delay Timec

td(off)

112

125

Fall Timec

-39

Source-Drain Diode Ratings and Characteristicsb

Pulsed Currenta

ISM

- 200

Forward Voltage

VSD

IF = - 50 A, VGS = 0 V

- 0.8

- 1.5

2SJ604.

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