STM32F479II datasheet(103/208 Pages) STMICROELECTRONICS

103 / 208 page

DocID028010 Rev 2

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STM32F479xx

Electrical characteristics

187

Figure 25. Typical VBAT current consumption

(RTC ON / backup SRAM ON and LSE in Low drive mode)

Table 31. Typical and maximum current consumption in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.3 V

IDD_VBAT

Backup

domain supply

current

Backup SRAM ON, RTC ON

and LSE oscillator in Low

Power mode

1.431

1.577

1.825

1.9

12.0

24.0

µA

Backup SRAM OFF, RTC ON

and LSE oscillator in Low

Power mode

0.720

0.849

1.060

1.1

7.0

13.9

Backup SRAM ON, RTC ON

and LSE oscillator in High

Drive mode

2.212

2.368

2.630

2.80

17.3

34.6

Backup SRAM OFF, RTC ON

and LSE oscillator in High

Drive mode

1.499

1.637

1.862

2.0

12.3

24.5

Backup SRAM ON, RTC and

LSE OFF

0.710

0.720

0.760

0.8(3)

5.0

10.0(3)

Backup SRAM OFF, RTC and

LSE OFF

0.018

0.020

0.024

0.2(3)

2.0

4.0(3)

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Based on characterization, tested in production.

3. Based on test during characterization.

2040

6080

100

Temperature (°C)

1.65V

1.70V

1.80V

2.00V

2.40V

2.70V

3.00V

3.30V

3.60V

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